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10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 flow 90pack 0 1200v/8a clip-in pcb mounting (optional) open emitter for easy current sensing standard drive servo drive bookshelf inverter 10-rz126pa008sc-m627f41 10-r0126pa008sc-m627f40 t j =25c, unless otherwise specified parameter symbol value unit inverter transistor t h =80c 12 t c =80 c 12 t h =80 c 51 t c =80 c 78 t sc t j 150c 10 s v cc v g e =15v 800 v * m easured with phase-change material inverter diode t h =80c 22 t c =80 c 29 t h =80 c 49 t c =80 c 74 * me asured with phase-change material 24 20 20 t j =t j max t p limited by t j max dc fo rward current * p tot gate-emitter peak voltage t j =t j max a i f v rrm a i frm v types maximum ratings condition features flow 90 pa ck 0 target applications schematic c pulsed collector current maximum junction temperature peak repetitive reverse voltage power dissipation per igbt * maximum junction temperature short circuit ratings turn off safe operating area repetitive peak forward current power dissipation per diode * collector-emitter break down voltage dc collector current * t p limited by t j max a 1200 a v w v ge 1 6 w 175 t j =t j ma x t j =t j max vce 1 200v, tj top max v 1200 c 175 a 90 pcb mounting for easy heat sink assembly t j max p tot i cpulse t j max v ce i c with clips without clips 1 revi sion: 2 copyright by vincotech
10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 t j =25c, unless otherwise specified parameter symbol value unit maximum ratings condition thermal properties insulation properties v is t=2s dc vol tage 4000 v min 12,7 mm min 10,93 mm cti >200 comparative tracking index insulation voltage creepage distance t op operation temperature under switching condition clea r ance -40+150 c storage temperature t stg -40+125 c 2 revi sion: 2 copyright by vincotech
10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 parameter symbol u nit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max tj=25c 5,0 5,8 6,5 tj=150c tj=25c 1,5 1,91 2,3 tj=150c 2,21 tj=25c 10 tj=150c tj=25c 200 tj=150c tj=25c 55 tj=150c 54 tj=25c 23 tj=150c 24 tj=25c 177 tj=150c 240 tj=25c 67 tj=150c 121 tj=25c 0,556 tj=150c 0,870 tj=25c 0,434 tj=150c 0,733 thermal resistance chip to heatsink per chip r thjh phase-change material 1,85 k/w thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 2,18 k/w tj=25c 1,2 1,69 2,30 tj=150c 1,59 tj=25c 7 tj=150c 9 tj=25c 247 tj=150c 428 tj=25c 0,85 tj=150c 1,77 di(rec)max tj=25c 80 /dt tj=150c 44 tj=25c 0,328 tj=150c 0,714 thermal resistance chip to heatsink per chip r thjh phase-change material 1,95 k/w ther mal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 2,30 k/w tj =25c pf mws ns ns a nc na v a v tj=25 c t j=25c tj=25c tj=25c 50 none rgon=32 thermistor ? r/r rated r esistance r power dissipation constant deviation of r25 mw/k power dissipation p mw 600 600 8 0,0003 25 0 960 8 1200 collector-emitter saturation voltage collector-emitter cut-off current incl. diode fall time turn-off delay time turn-on delay time rise time gate-emitter leakage current reverse recovery time reverse recovered energy peak rate of fall of recovery current turn-on energy loss per pulse reverse recovered charge inverter diode peak reverse recovery current reverse transfer capacitance diode forward voltage gate charge c ies 15 8 8 15 rgon=32 0 20 15 rgof f =32 f=1mhz mws a/s c cha racteristic values value condi t ions input capacitance output capacitance turn-off energy loss per pulse integrated gate resistor inverter transistor gate emitter threshold voltage v ge(th) v ce(sat) i ces r gint i ges t f e on e off t d(on) i rrm v f c oss c rss q rr t rr q gate t r t d(off) v ce =v ge erec 0 15 2 200 5 -5 % 4700 8 v 490 tj=25 c 30 53 b-value b (25/50) tol. 3% tj=25c 3500 k b (25/100) tj=25c 3560 k b-value vincotech ntc reference g tj=25c 3 revi sion: 2 copyright by vincotech
10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 figure 1 output inverter igbt figure 2 output inverter igbt typical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 2 50 s t p = 2 50 s t j = 2 5 c t j = 150 c v g e from 7 v t o 17 v in steps of 1 v v ge from 7 v t o 17 v in steps of 1 v figure 3 output inverter igbt figure 4 output inverter fwd typical transfer characteristics typical diode forward current as i c = f(v ge ) a funct ion of forward voltage i f = f(v f ) at at t p = 2 50 s t p = 2 50 s v ce = 10 v out put inverter typical output characteristics 0 5 10 15 20 25 0 1 2 3 4 5 v ce (v) i c (a) 0 2 4 6 8 0 2 4 6 8 10 12 v ge (v) i c (a) t j = 25c t j = 150c 0 2 4 6 8 0 0,4 0,8 1,2 1,6 2 v f (v) i f (a) t j = 25c t j = 150c 0 5 10 15 20 25 0 1 2 3 4 5 v ce (v) i c (a) 4 rev ision: 2 copyright by vincotech
10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 figure 5 output inverter igbt figure 6 output inverter igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f (r g ) with an inductive load at with an inductive load at t j = 25/1 5 0 c t j = 25/15 0 c v ce = 600 v v ce = 6 00 v v ge = 15 v v ge = 15 v r go n = 32 i c = 8 a r go ff = 32 figure 7 output inverter fwd figure 8 output inverter fwd typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c ) e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/1 5 0 c t j = 25/15 0 c v ce = 600 v v ce = 6 00 v v ge = 15 v v ge = 15 v r go n = 32 i c = 8 a ou tp ut inverter e on high t e off high t e on low t e off low t 0 0,4 0, 8 1 ,2 1,6 2 0 5 10 15 i c (a) e (mws) e off high t e on high t e on low t e off low t 0 0,4 0,8 1,2 1,6 2 0 20 40 60 80 100 120 140 r g ( w ) e (mws) t j = 150c e rec t j = 25c e rec 0 0,2 0,4 0 ,6 0,8 1 0 3 6 9 12 15 i c (a) e (mws) t j = 150c e rec t j = 25c e rec 0 0,2 0,4 0,6 0,8 1 0 32 64 96 128 r g ( w ) e (mws) 25 / 150 25 / 150 25 / 150 25 / 150 5 revis i on: 2 copyright by vincotech
10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 figure 9 output inverter igbt figure 10 output inverter igbt typical switching times as a typica l switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 150 c t j = 150 c v ce = 600 v v c e = 600 v v g e = 15 v v g e = 15 v r g on = 32 i c = 8 a r g of f = 32 figure 11 outpu t inverter fwd figure 12 output inverter fwd typical reverse recovery time as a typica l reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(i c ) t rr = f(r gon ) at at t j = 25/ 1 50 c t j = 25/1 50 c v ce = 600 v v r = 6 00 v v g e = 15 v i f = 8 a r gon = 32 v ge = 1 5 v o utput inverter t doff t f t don t r 0,00 0,0 1 0 ,10 1,00 0 3 6 9 12 15 i c (a) t ( m s) t j = 150c t rr t j = 25c t rr 0,0 0,2 0, 4 0,6 0,8 0 32 64 96 128 r g on ( w ww w ) t rr ( m s) t doff t f t don t r 0,00 0,01 0 ,10 1,00 0 32 64 96 128 r g ( w ww w ) t ( m s) t j = 150c t rr t rr t j = 25c 0 0,1 0, 2 0,3 0,4 0,5 0,6 0,7 0 3 6 9 12 15 i c (a) t rr ( m s) 25 / 150 25 / 150 copyright vincotech 6 revi s ion: 2 copyright by vincotech
10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 figure 13 output inverter fwd figure 14 output inverter fwd typical reverse recovery charge as a typica l reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c ) q rr = f(r gon ) at at at t j = 25/ 1 50 c t j = 25/1 50 c v ce = 600 v v r = 6 00 v v g e = 15 v i f = 8 a r gon = 32 v ge = 1 5 v fi gure 15 outpu t inverter fwd figure 16 output inverter fwd typical reverse recovery current as a typica l reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c ) i rrm = f(r gon ) at at t j = 25/ 1 50 c t j = 25/1 50 c v ce = 600 v v r = 6 00 v v g e = 15 v i f = 8 a r gon = 32 v ge = 1 5 v o utput inverter t j = 150c i rrm t j = 25c i rrm 0 5 10 15 20 0 3 2 64 96 128 r gon ( w ww w ) i rrm (a) q rr t j = 150c q rr t j = 25c 0,0 0,5 1 , 0 1,5 2,0 0 32 64 96 128 r g on ( w ) q rr ( m c) t j = 150c i rrm t j = 25c i rrm 0 2 4 6 8 10 0 3 6 9 12 15 i c (a) i rrm (a) t j = 150c q rr t j = 25c q rr 0 0,5 1 1, 5 2 2,5 0 3 6 9 12 15 i c (a) q rr ( m c) 25 / 150 25 / 150 25 / 150 25 / 150 copyright vincotech 7 revi s ion: 2 copyright by vincotech
10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 figure 17 output inverter fwd figure 18 output inverter fwd typical rate of fall of forward typica l rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(i c ) di 0 /dt ,di rec /dt = f(r gon ) at at t j = 25/ 1 50 c t j = 25/1 50 c v ce = 600 v v r = 6 00 v v g e = 15 v i f = 8 a r gon = 32 v ge = 1 5 v fi gure 19 outpu t inverter igbt figure 20 output inverter fwd igbt transient thermal impedance fwd t ransient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p ) z thjh = f(t p ) at at d = t p / t d = t p / t r thjh = 1,85 k/w r thjh = 2,18 k/w r thjh = 1,95 k/w r thjh = 2,30 k/w igbt thermal model values fwd thermal model values phase change interface phase change interface r (c/w) tau (s) r (c/w) tau (s) r (c/w) tau (s) r (c/w) tau (s) 0,11 1,4e+00 0,13 1,4e+00 0,05 4,1e+00 0,06 4,1e+00 0,31 1,6e-01 0,36 1,6e-01 0,13 5,3e-01 0,15 5,3e-01 0,82 4,8e-02 0,96 4,8e-02 0,69 7,6e-02 0,81 7,6e-02 0,30 1,0e-02 0,35 1,0e-02 0,53 1,7e-02 0,62 1,7e-02 0,17 2,8e-03 0,20 2,8e-03 0,33 4,0e-03 0,39 4,0e-03 0,15 4,9e-04 0,18 4,9e-04 0,23 7,3e-04 0,27 7,3e-04 output inverter thermal grease therm al grease t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z th-jh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di rec /dt 0 500 1 0 00 1500 2000 2500 3000 0 32 64 96 128 r gon ( w ww w ) di rec / dt (a/ m s) di 0 /dt 0 80 160 240 320 400 0 3 6 9 12 15 i c (a) di rec / dt (a/ m m m m s) di rec /dt di 0 /dt 25 / 150 25 / 150 copyright vincotech 8 revi s ion: 2 copyright by vincotech
10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 figure 21 output inverter igbt figure 22 output inverter igbt power dissipation as a collec tor current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i c = f(t h ) at at t j = 1 75 c t j = 175 c v ge = 15 v figur e 23 outpu t inverter fwd figure 24 output inverter fwd power dissipation as a forwar d current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) at at t j = 1 75 c t j = 175 c output inverter 0 20 40 60 80 100 0 50 100 150 200 t h ( o c) p tot (w) 0 2 4 6 8 10 12 14 0 50 100 150 200 t h ( o c) i c (a) 0 20 40 60 80 100 0 50 100 150 200 t h ( o c) p tot (w) 0 5 10 15 20 25 30 35 0 50 100 150 200 t h ( o c) i f (a) copyright vincotech 9 revision: 2 copyright by vincotech
10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 figure 25 output inverter igbt figure 26 output inverter igbt safe operating area as a function gate voltage vs gate charge of collector-emitter voltage i c = f(v ce ) v ge = f(q ge ) at at d = single pulse i c = 8 a t h = 8 0 oc v g e = 15 v t j = t jmax oc figure 27 outpu t inverter igbt figure 28 output inverter igbt short circuit withstand time as a function of typical short circuit collector current as a function of gate-emitter voltage gate-emitter voltage t sc = f(v ge ) v ge = f(q ge ) at at v ce = 120 0 v v ce 1200 v t j 175 o c t j = 175 o c output inverter v ce (v) i c (a) 10 0 10 -1 10 1 10 2 10 1 10 2 100us 1ms 10ms 100ms dc 10 0 10 3 10us 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 q g (nc) v ge (v) 240v 960v 0 2 4 6 8 10 12 14 16 12 13 14 15 16 17 v ge (v) t sc (s) 0 20 40 60 80 100 12 14 16 18 20 v ge (v) i c (sc) copyright vincotech 10 revision: 2 copyright by vincotech
10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 figure 29 igbt reverse bias safe operating area i c = f(v ce ) at t j = t j max -25 oc u cc m inus =u ccplus switching mode : 3phase spwm 0 3 6 9 12 15 18 0 200 400 600 800 1000 1200 1400 v ce (v) i c (a) i c max v ce max i c module i c chip copyright vincotech 11 revision: 2 copyright by vincotech
10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 figure 1 thermistor typical ntc characteristic as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 100 0 2 000 3000 4000 5000 6000 25 45 65 85 105 125 t (c) r/ copyright vincotech 12 revision: 2 copyright by vincotech
10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 t j 150 c r gon 32 r goff 32 figure 1 outpu t inverter igbt figure 2 output inverter igbt turn-off switching waveforms & definition of t doff , t eoff turn-on switching waveforms & definition of tdon, t eon (t eoff = integrating time for e off ) (t eon = integrating time for e on ) v ge (0%) = -15 v v g e (0%) = -15 v v g e (100%) = 15 v v ge (100%) = 15 v v c ( 100%) = 600 v v c (100%) = 600 v i c (100%) = 8 a i c (1 00%) = 8 a t dof f = 0,24 s t d on = 0,05 s t e off = 0,61 s t e on = 0,28 s fi gure 3 outpu t inverter igbt figure 4 output inverter igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 600 v v c (100%) = 600 v i c (100%) = 8 a i c (1 00%) = 8 a t f = 0, 12 s t r = 0,02 s s witching definitions output inverter general conditions = = = i c 1% v ce 90% v ge 90% -25 0 25 50 75 1 00 125 -0,2 0 0,2 0,4 0,6 time (us) % t doff t eoff v ce i c v ge i c10% v ge10% t don v ce 3% -50 0 50 100 1 50 200 250 2,9 3 3,1 3,2 3,3 3,4 time(us) % i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -25 0 25 50 75 1 00 125 0 0,1 0,2 0,3 0,4 0,5 time (us) % v ce i c t f i c10% i c90% -50 0 50 100 1 50 200 250 3 3,1 3,2 3,3 3,4 time(us) % t r v ce i c copyright vincotech 13 re v ision: 2 copyright by vincotech
10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 figure 5 output inverter igbt figure 6 output inverter igbt turn-off switching waveforms & definition of t eoff turn-on switching waveforms & definition of t eon p off (100%) = 4,80 kw p on (100%) = 4,80 kw e off (100%) = 0,73 mj e on (100%) = 0,87 mj t eoff = 0,61 s t e on = 0,28 s fi gure 7 outpu t inverter igbt figure 8 output inverter fwd gate voltage vs gate charge (measured) turn-off switching waveforms & definition of t rr v geoff = -15 v v d (100%) = 600 v v g eon = 15 v i d ( 100%) = 8 a v c (1 00%) = 600 v i r rm (100%) = -9 a i c ( 100%) = 8 a t rr = 0 ,43 s q g = 67,7 3 nc switching definitions output inverter i c 1% v ge 90% -25 0 25 50 7 5 1 00 125 -0,2 0 0,2 0,4 0,6 0,8 time (us) % p off e off t eoff v ce 3% v ge 10% -50 0 50 100 1 50 200 2,95 3,05 3,15 3,25 3,35 time(us) % p on e on t eon -20 -15 -10 -5 0 5 10 15 20 -20 0 20 40 60 80 qg (nc) v ge (v) i rrm 10% i rrm 90% i rrm 100% t rr -160 -120 - 80 -40 0 40 80 120 2,8 3 3,2 3,4 3,6 3,8 time(us) % i d v d fitted copyright vincotech 14 re v ision: 2 copyright by vincotech
10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 figure 9 output inverter fwd figure 10 output inverter fwd turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr ) (t erec = integrating time for e rec ) i d (100%) = 8 a p re c (100%) = 4,80 kw q rr (100%) = 1,77 c e r ec (100%) = 0,71 mj t qrr = 1,00 s t e rec = 1,00 s s witching definitions output inverter t qrr -150 -10 0 - 50 0 50 100 150 2,5 3 3,5 4 4,5 % i d q rr time(us) -25 0 25 50 75 100 125 3 3,2 3,4 3,6 3,8 4 4,2 time(us) % p rec e rec t erec copyright vincotech 1 5 r e v ision: 2 copyright by vincotech
10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 version ordering code in datamatrix as in packaging barcode as without thermal paste ,housing without clips 10-rz126pa025sc-m627f41 m627f41 m627f41 without thermal paste ,housing with clips 10-r0126pa025sc-m627f40 m627f40 m627f40 without clips with clips outline pinout ordering code & marking ordering code and marking - outline - pinout copyright vincotech 16 revision: 2 copyright by vincotech
10-R01126PA008SC-M627F40 10-rz1126pa008sc-m627f41 disclaimer life support policy as used herein: the information given in this datasheet describes the type of component and does not represent assured characteristics. for tested values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright vincotech 17 revision: 2 copyright by vincotech

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